The F6102 is an 8-element receiver silicon IC designed using a SiGe BiCMOS process for Ka-Band (17.5GHz to 21.5GHz) SATCOM, Weather Radar, Test and Measurement and other phased array applications. The core IC has 6-bit phase control coupled with up to 30dB gain control on each channel to achieve fine beam steering and gain compensation between radiating elements. The device has 16dB nominal gain and -30dBm IP1dB. The core chip achieves an RMS phase error of 3° and RMS gain error of 0.3dB over the frequency of operation.

The chip operates at 2.1V to 2.5V and features ESD protection on all pins. The core design includes standard SPI protocol that operates up 50MHz with fast-beam switching, fast beam-state loading and fast four on-chip beam storage. The module has four external bias pins (5-bit DACs) to control external LNA’s, temperature reporting and external biasing.


  • 17.5GHz to 21.5GHz operation
  • 8 radiation elements
  • 20ns typical gain and phase settling time
  • 3° typical RMS phase error
  • 0.3dB typical RMS gain error
  • 30dB gain attenuation range
  • 5-bit chip address
  • Integrated PTAT with external biasing
  • Internal temperature sensor
  • Up to 50MHz SPI control
  • Programmable on-chip memory


下单器件 ID Part Status Pkg. Type Lead Count (#) Temp. Grade Carrier Type 封装 Buy Sample
F6102NTGK Not Recommended for New Designs VFQFPN 40 K Tray Package Info
F6102NTGK8 Not Recommended for New Designs VFQFPN 40 K Reel Package Info


文档标题 其他语言 类型 文档格式 文件大小 日期
F6102 Advance Short-Form Datasheet Short Form Datasheet PDF 239 KB
RF Product Selection Guide Guide PDF 1.18 MB
SATCOM Receive Evaluation Software r0.0.5.1 Software ZIP 3.84 MB
IDT Products for Radio Applications 日本語 Product Brief PDF 2.34 MB