IDT is a leading dual-port SRAM (DPRAM) supplier, bringing systems design experience together with high-performance circuit and multiport SRAM technology expertise to define synchronous and asynchronous dual-port and four-port memory products.
IDT’s synchronous dual-port SRAM devices are memory devices with clocked inputs and outputs for data, address, and control functions. These DPRAMs provide simultaneous access to a single static SRAM memory location from two buses with full synchronous operation on both ports.
- DPRAM increases bandwidth (~2x SRAM)
- DPRAM offers shorter time-to-market than alternatives
- DPRAM reduces design complexity
IDT DPRAM products feature simultaneous access capability, with a number of arbitration techniques available to the designer to prevent contention and system wait states. Semaphore token passing, software arbitration, and on-chip hardware arbitration enable the designer to select the most efficient DPRAM for the application.
IDT’s dual-port SRAMs come in industry-standard packages both Green (6/6 RoHS Compliant) and standard, 2.5 V to 5 V I/O voltages, and commercial, industrial, and military grades. IDT is continually working to reduce the cost of high-performance dual-port SRAM solutions, and will continue to be the leading provider of dual-port SRAM in the semiconductor industry.
Download: IDT Multi-Port Products Package and Ordering Information (PDF)
Download: Military and Aerospace Product Overview (PDF)
Download: Multi-port Memory Products Overview (PDF)
Download: IDT Specialty Memory Products Overview (PDF)
About Dual-Port SRAM (DPRAM)
Dual-port SRAM memory (also referred to as DPRAM) is a type of static random access memory that supports multiple, simultaneous reads or writes at different addresses within the memory. This is different than single-port memory which only allows one access at a time. The main benefit of this feature is higher performance, since DPRAM allows for two memory cells to be read/written during each clock cycle instead of just one.
The transistor-level architecture of dual-port SRAM uses an eight-transistor basic memory cell, whereas single-port RAM uses a six-transistor basic memory cell. While this generally results in a larger die size, IDT’s synchronous SRAM solutions are optimized and offered in very compact packages.
Key parameters for choosing a dual-port SRAM include:
- memory density: this is the number of bits the DPRAM will hold in its memory. IDT offers sizes up to 36 Mb.
- bus width: the number of “lanes” used to read and write to the dual-port SRAM. IDT offers all popular configurations.
- I/O frequency: the supported frequencies for the clocking signals. IDT supports frequencies up to 200 MHz.
- output type: the method in which the memory data is output from the DPRAM. IDT offers both flowthrough and pipelined options.
- core voltage: the supply voltage used to power the dual-port SRAM. This is typically defined by the power rails available in the system.
- I/O voltage: the voltage used for the data input and output, for some devices this is seperate from the core devices.