Renesas offers the next generation magnetoresistive random-access memory (MRAM) by utilizing a new proprietary technology called perpendicular Magnetic-Tunnel-Junction STT (Spin-transfer Torque) to achieve best-in-class non-volatile memory with long data retention and fast serial interfaces. With a wide range of memory densities and high operating temperatures, Renesas’s MRAM is suited for applications ranging from factory automation equipment requiring fast back-up data retrieval to medical data units with long-term data storage requirements. 

Renesas MRAM product offerings include:

  • High memory density from 4Mb to 16Mb
  • Low active write and read currents
  • Configurable interfaces for SPI, DPI, QPI with SDR and DDR modes, up to 108MHz
  • Low operating power from 1.71V to 3.6V and operating temperature from -40°C to 105°C

About MRAM Memory 

An MRAM is a type of memory that stores data within cells of magnetic elements. Two ferromagnetic plates separated by a thin insulator hold a magnetization. One plate is a permanent magnet set to a particular polarity. The second plate’s magnetization is changed with an external field. During programming, this field can produce a low or high resistance state, respectively representing “0” or “1” in data storage.
 

Documentation & Downloads

Title Other Languages Type Format File Size Date
Other
MRAM Family Overview Overview PDF 1.20 MB