The F5280 is a 4-channel TRX half-duplex silicon IC designed using a SiGe BiCMOS process for 28GHz 5G phased-array applications. The core IC has very flexible gain and phase control on each channel to achieve fine beam steering and gain compensation between radiating channels. The core design includes standard SPI protocol that operates up to 50MHz with fast-beam switching, fast beam-state loading, and fast four on-chip beam storage.

Features

  • 25GHz to 31GHz operation
  • 4 radiation channels
  • 100ns typical RF switch Tx/Rx mode switching time
  • 20ns typical gain and phase settling time
  • 3° typical RMS phase error
  • 0.4dB typical RMS gain error
  • Advanced SPI with 4 state memory
  • 6-bit chip address
  • Integrated PTAT with external biasing
  • Internal temperature sensor
  • Up to 50MHz SPI control
  • Programmable on-chip memory
  • Supply voltage: +2.3V to +2.7V
  • -40°C to +105°C ambient operating temperature range
  • 3.6 × 3.6 mm, 49-BGA package

Product Options

注文可能な製品ID Part Status Pkg. Type Lead Count (#) Temp. Grade Carrier Type パッケージ 購入/サンプル
F5280AVGK Preview FCCSP 49 K Tray Package Info
Availability
F5280AVGK8 Preview FCCSP 49 K Reel Package Info
Availability

Documentation & Downloads

タイトル 他の言語 Type 形式 サイズ 日付
データシート
F5280 Short-Form Datasheet Short Form Datasheet PDF 148 KB
その他資料
IDT Products for Radio Applications (日本語) English Product Brief PDF 2.34 MB