The F6103 is an 8-element receiver silicon IC designed using a SiGe BiCMOS process for 14GHz to 16GHz SATCOM, Weather Radar, Test and Measurement and other phased array applications. The core IC has 6-bit phase control coupled with 30dB gain control on each channel to achieve fine beam steering and gain compensation between radiating elements. The device has 17dB nominal electric gain and -31dBm IP1dB. The core chip achieves an RMS phase error of 3° and RMS gain error of 0.3dB over the frequency of operation.

The chip operates at 2.1 to 2.5 V and features ESD protection on all pins. The core design includes standard SPI protocol that operates up 50MHz with fast-beam switching, fast beam-state loading and fast four on-chip beam storage. The module has four external bias pins (5-bit DACs) to control external LNA’s, temperature reporting and external biasing.

Features

  • 14GHz to 16GHz operation
  • 8 radiation elements
  • 20ns typical gain and phase settling time 
  • 3° typical RMS phase error
  • 0.3dB typical RMS gain error
  • 30dB gain attenuation range
  • 5-bit chip address
  • Integrated PTAT with external biasing
  • Internal temperature sensor
  • Up to 50MHz SPI control
  • Programmable on-chip memory

Product Options

注文可能な製品ID Part Status Pkg. Code Pkg. Type Lead Count (#) Temp. Grade Carrier Type 購入/サンプル
F6103NTGK Preview NTG40P2 VFQFPN 40 K Tray
Availability
F6103NTGK8 Preview NTG40P2 VFQFPN 40 K Reel
Availability

技術資料

タイトル 他の言語 タイプ 形式 サイズ 日付
データシート
F6103 Advance Short-Form Datasheet Short Form Datasheet PDF 264 KB
その他資料
IDT Products for Radio Applications (日本語) English Product Brief PDF 2.34 MB